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B1040W Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE
Features
● VR 40V
● IFAV 1A
B1040W
SOD1 23 Plastic-Encapsulate Diodes
Schottky Rectifier
SOD1 23
Applications
● Low Voltage Rectification
● Low Power Consumption Applications
● High Efficiency DC/DC Conversion
Marking
● SZ
HD SD0.48
Parameter
DC reverse voltage
Mean rectifying current
Non-repetitive Peak Forward Surge Current @ t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VR
IO
IFSM
PD
RθJA
TJ
TSTG
Value
40
1
9
0.35
285
125
-55 ~ +150
Unit
V
A
A
W
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
Parameter
Symbol
Test Condition
Min Type Max Unit
Reverse voltage
VBR
IR =250uA
40
V
Reverse current
VR =20V
IR
VR =40V
2
20
µA
5
50
µA
Forward voltage
IF =0.5A
VF
IF =0.7A
0.45 0.5
V
0.48 0.53
V
Diode capacitance
IF =1A
CD
VR=10V, f=1MHz
0.5 0.58
V
18
pF
High Diode Semiconductor
1