A1015 Datasheet, PDF (1/4 Pages) Weitron Technology – PNP General Purpose Transistors

A1015
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
● High voltage and high current
● Excellent h_FE Linearity
● Low niose
● _{Complementary to C1815}
Marking:
● BA
SOT- 23
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
-50
Collector-Emitter Voltage
-50
Emitter-Base Voltage
-5
Collector Current
-150
Collector Power Dissipation
200
Thermal Resistance From Junction To Ambient
625
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
C
B
E
Electrical Characteristics (T=25℃ Unless otherwise specified）
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V_(BR)CBO
V_(BR)CEO
V(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
I_C= = -100u A,I_E 0
I_C= = -0.1mA, I_B 0
I_E= = -100 u A, I_C 0
= V_CB= -50V ,I_E 0
V= _CE= -50V , I_B 0
= V_EB= - 5V, I _C 0
V_CE= -6V,I_C= -2mA
I_C=-100 mA, I_B= -10mA
I_C=-100 mA, I_B= -10mA
V_CE= -10V,I_C= -1mA
f=30MHz
-50
-50
-5
130
80
V
V
V
-0.1
μA
-0.1
μA
-0.1
μA
400
-0.3
V
-1.1
V
MHz
CLASSIFICATION OF h_FE
Rank
Range
L
130-200
H
200- 400
High Diode Semiconductor
1