4N60 Datasheet, PDF (1/3 Pages) Unisonic Technologies – 4 Amps, 600 Volts N-CHANNEL POWER MOSFET

4N60
TO-251 Plastic-Encapsulate MOSFET
N -Channel MOSFET
Product Summary
V_(BR)DSS
600V
R_DS(on)MAX
2.3Ω@10V
I_D
TO- 251
4A
Features
● High Current Rating
● ^{Lower R}ds(on)
● Lower Capacitance
● Lower Total Gate Charge
Marking:
● _4N60
G _DS
Parameter
Drain-Source voltage
Gate-Source voltage
Drain Current-DC Value
Drain Current-Peak Value
Single Pulsed Avalanche Energy
Power Dissipation_{（ T a = 2 5 ℃ ）}
Power Dissipation_{（ T c = 2 5 ℃ ）}
Thermal Resistance fromJunctiontoCase
Thermal Resistance fromJunctiontoAmbient
Junction Temperature
Storage Temperature
ESD (Human Body Model)
ESD (Machine Model)
Symbol
VDS
VGS
ID
IDM
EAS
PD
PD
Rθ Jc
Rθ JA
Tj
Tstg
ESD
ESD
Value
600
±30
4
16
200
2
75
4.5
62.5
150
-55~150
＞400
＞8000
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Conditions
Min
Gate Threshold Voltage
VGS(th) VDS= VGS，ID=250uA
2
Drain-Source Breakdown Voltage _BVDSS VGS=0V，ID=250uA
600
Drain-Source On-Resistance
RDON
VGS=10V，ID=2A
Diode Forward Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
VFSD
IDSS
IGSS
IS=4A，VGS =0V
VDS =600V，VGS =0V
VGS =±30V，VDS =0V
Max
4
2.3
1.5
1
±100
High Diode Semiconductor
Unit
V
V
A
A
mJ
W
W
℃/W
℃/W
℃
℃
V
V
Unit
V
V
Ω
V
uA
uA
1