4GBJ4005 Datasheet, PDF (1/3 Pages) HY ELECTRONIC CORP. – GLASS PASSIVATED BRIDGE RECTIFIERS

4GBJ4005 thru 4GBJ410
4GBJ Plastic-Encapsulate Bridge Rectifier
Features
●Io
4.0A
●VRRM
50V-1000V
●High surge current capability
●Polarity: Color band denotes cathode
Applications
● _{General purpose 1 phase Bridge}
rectifier applications
Marking
● 4GBJ4XX
XX ^: From 005 To 10
4 GBJ
+~ ~ ^_
Item
Repetitive Peak Reverse
Voltage
Symbol Unit
V_RRM
V
Conditions
4GBJ4
005 01 02 04 06 08 10
50 100 200 400 600 800 1000
Average Rectified Output
Current
I_O
A ^{60Hz sine wave, With heatsink Tc =108℃}
R-load
Without heatsink T_a =25℃
4
2.3
Surge(Non-
repetitive)Forward Current
I_FSM
A
60H_Z sine wave, 1 cycle, T_j=25℃
120
Current Squared Time
I²t
A²S 1ms≤t<8.3ms Tj=25℃，Rating of per diode
60
Storage Temperature
T_stg
℃
-55 ~+150
Junction Temperature
Dielectric Strength
Mounting Torque
T_j
℃
V_dis
KV
Tor
kg·
cm
Terminals to case，AC 1 minute
Recommend torque：5kg·cm
-55 ~+150
2
8
Electrical Characteristics（T_a=25℃ Unless otherwise specified）
Item
Symbol Unit
Test Condition
Max
Peak Forward Voltage
V_FM
V
I_FM=2A, Pulse measurement, Rating of per diode
1.05
Peak Reverse Current
I_{RRM μA} V_RM=V_RRM , Pulse measurement, Rating of per diode
10
R_θJ-A
Between junction and ambient, Without heatsink
30
Thermal Resistance
℃/W
R_θJ-C
Between junction and case, With heatsink
5.5
High Diode Semiconductor
1