2SC945 Datasheet, PDF (1/4 Pages) NEC – NPN Silicon Transistor(AF amplifier and low speed switching)

2SC945
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
● _{Excellent hFE Linearity}
● Low noise
SOT- 23
Marking:
● CR
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
60
Collector-Emitter Voltage
50
Emitter-Base Voltage
5
Collector Current
150
Collector Power Dissipation
200
Thermal Resistance From Junction To Ambient
625
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
C
B
E
Electrical Characteristics (T=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test conditions
Min Typ
V(BR)CBO
I_C=100uA, I_E=0
60
V(BR)CEO
I_C=1mA , I_B=0
50
V(BR)EBO
I_E=0.1mA, I_C=0
5
I_CBO
V_CB=60V, I_E=0
I_CER
V_CE=55V,R=10MΩ
I_EBO
V_EB=5V , I_C=0
h_FE(1)
V_CE=6 V , I_C=1mA
130
h_FE(2)
V_CE=6 V , I_C=0.1mA
40
V_CE(sat)
I_C=100mA, I_B=10mA
V_BE(sat)
I_C=100mA, I_B=10mA
f_T
V_CE=6V,I_C=10mA,f =30 MHz 150
C_ob
V_CB=10V,I_E=0,f=1MH_Z
VCE=6V,IC=0.1mA
NF
4
Rg=10kΩ,f=1kMHZ
Max
0.1
0.1
0.1
400
Unit
V
V
V
uA
uA
uA
0.3
V
1
V
MHz
3.0
pF
10
dB
CLASSIFICATION OF h_FE
Rank
Range
L
130-200
H
200-400
High Diode Semiconductor
1