2SC2712 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS)

2SC2712
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
● Audio Frequency General Purpose Amplifier Applications
● Low Noise: NF=1 dB (Typ),10dB(MAX)
● Complementary to 2SA1162
SOT- 23
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
60
Collector-Emitter Voltage
50
Emitter-Base Voltage
5
Collector Current
150
Collector Power Dissipation
150
Thermal Resistance From Junction To Ambient
625
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
C
B
E
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Test conditions
Min Typ
Collector-base breakdown voltage
V_(BR)CBO I_C= 100μA, I_E=0
60
Collector-emitter breakdown voltage
V_(BR)CEO I_C=1mA ,I_B=0
50
Emitter-base breakdown voltage
V_(BR)EBO I_E= 100μA, I_C=0
5
Collector cut-off current
I_CBO
V_CB= 60 V, I_E=0
Emitter cut-off current
I_EBO
V_EB=5V, I_C=0
DC current gain
h_FE
V_CE=6V, I_C=2mA
70
Collector-emitter saturation voltage
V_CE(sat) I_C= 100mA, I_B=10mA
0.1
Transition frequency
f_T
V_CE=10V, I_C= 1mA
80
Output capacitance
Noise Figure
C_ob
V_CB=10V, I_E=0,f=1 MHz
2.0
NF
V_CE=6V,I_C=0.1mA,f=1kHz,
1.0
Rg=10kΩ
Max
0.1
0.1
700
0.25
3.5
10
Unit
V
V
V
μA
μA
V
MHz
pF
dB
CLASSIFICATION OF h_FE
Rank
O
Range
70-140
Marking
LO
Y
120-240
LY
GR
200-400
LG
High Diode Semiconductor
BL
350-700
LL
1