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| 2SC2412 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor | |||
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2SC2412
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
â Low Cob ,Cob = 2.0 pF (Typ).
SOT- 23
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
7
150
200
625
150
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
Electrical Characteristics (Ta=25â Unless otherwise specifiedï¼
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=50μA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=50μA,IC=0
Collector cut-off current
ICBO
VCB=60V,IE=0
Emitter cut-off current
IEBO
VEB=7V,IC=0
DC current gain
hFE
VCE=6V,IC=1mA
Collector-emitter saturation voltage
VCE(sat) IC=50mA,IB=5mA
Transition frequency
fT
VCE=12V,IC=-2mA,f=100MHz
Collector output capacitance
Cob
VCB=12V,IE=0,f=1MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
120 - 270
BQ
R
180 - 390
BR
C
B
E
Min Typ Max Unit
60
V
50
V
7
V
0.1
μA
0.1
μA
120
560
0.4
V
160
MHz
2.0
3.5
pF
S
270 - 560
BS
High Diode Semiconductor
1
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