2SC1623 Datasheet, PDF (1/4 Pages) NEC – AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

2SC1623
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
● _{High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA}
● _{High voltage:VCEO=50V}
SOT- 23
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
60
Collector-Emitter Voltage
50
Emitter-Base Voltage
5
Collector Current
100
Collector Power Dissipation
200
Thermal Resistance From Junction To Ambient
625
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V_(BR)CBO I_C=100μA,I_E=0
V_(BR)CEO I_C=1mA,I_B=0
V_(BR)EBO I_E=100μA,I_C=0
I_CBO
V_CB=60V,I_E=0
I_EBO
V_EB=5V,I_C=0
h_FE
V_CE=6V,I_C=1mA
V_CE(sat) I_C=100mA,I_B=10mA
V_BE(sat) I_C=100mA,I_B=10mA
f_T
V_CE=6V,I_C=10mA
C
B
E
Min Typ Max Unit
60
V
50
V
5
V
0.1 μA
0.1 μA
90 200 600
0.3
V
1
V
250
MHz
CLASSIFICATION OF h_FE
Rank
Range
Marking
L4
90-180
L4
L5
135-270
L5
L6
200-400
L6
High Diode Semiconductor
L7
300-600
L7
1