2N7002T Datasheet, PDF (1/5 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002T
SOT-523 Plastic-Encapsulate MOSFET
N -Channel MOSFET
Product Summary
V(BR)DSS
60V
RDS(on)MAX
5Ω@10V
7Ω@5V
ID
115mA
SOT- 523
D
Features
● High density cell design for Low RDS(on)
● Voltage controlled small signal switch
● Rugged and reliable
● High saturation current capability
● ESD protected
Applications
● DC/DC Converter
● _{Load Switch for Portable Devices}
● _{Battery Switch}
Marking
● K72
S
G
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
RθJA
TJ
TSTG
Value
60
±20
115
0.150
833
150
-55~ +150
Unit
V
V
mA
W
℃/W
℃
℃
High Diode Semiconductor
1