2N7002 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002
SOT-23 Plastic-Encapsulate MOSFET
N -Channel MOSFET
Product Summary
V_(BR)DSS
60 V
R_DS(on)MAX
5Ω@10V
7Ω@5V
I_D
115mA
SOT- 23
D
Features
● MOSFET (N-Channel)
● _{High density cell design for low RDS(ON)}
● _{Voltage controlled small signal switch}
● _{Rugged and reliable}
● High saturation current capability
S
G
Applications
● _{Load Switch for Portable Devices}
● DC/DC Converter
Marking:
● 7002
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
P_D
R_θJA
T_J
T_stg
Value
60
20
0.115
0.225
556
150
-50 ~+150
Unit
V
V
A
W
℃/W
℃
High Diode Semiconductor
1