2N60 Datasheet, PDF (1/3 Pages) Unisonic Technologies – 2 Amps, 600 Volts N-CHANNEL MOSFET

2N60
TO-251 Plastic-Encapsulate MOSFET
N -Channel MOSFET
Product Summary
V_(BR)DSS
600V
R_DS(on)MAX
5 Ω@10V
I_D
TO- 251
2A
Features
● _{Robust High Voltage Termination}
● Avalanche Energy Specified
● Diode is Characterized for Use in Bridge Circuits
● ^I_DSS and V_DS(on) Specified at Elevated Temperature
Marking:
● _2N60
G _DS
Parameter
Drain-Source voltage
Gate-Source voltage
Drain Current-DC Value
Drain Current-Peak Value
Single Pulsed Avalanche Energy
Power Dissipation_{（ T a = 2 5 ℃ ）}
Power Dissipation_{（ T c = 2 5 ℃ ）}
Thermal Resistance fromJunctiontoCase
Thermal Resistance fromJunctiontoAmbient
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
EAS
PD
PD
Rθ Jc
Rθ JA
Tj
Tstg
Value
600
±30
2
8
80
2
35
4.5
62.5
150
-55~150
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Drain-Source Breakdown Voltage _BVDSS
Conditions
VDS= VGS，ID=250uA
VGS=0V，ID=250uA
Min
2
600
Drain-Source On-Resistance
RDON
VGS=10V，ID=1A
Diode Forward Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
VFSD
IDSS
IGSS
IS=2A，VGS =0V
VDS =600V，VGS =0V
VGS =±30V，VDS =0V
Max
4
5
1.5
1
±100
High Diode Semiconductor
Unit
V
V
A
A
mJ
W
W
℃/W
℃/W
℃
℃
Unit
V
V
Ω
V
uA
uA
1