1SS344 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

1SS344
SOT-23 Plastic-Encapsulate Diodes
Switching Diodes
Features
● Low Forward Voltage
● Fast Reverse Recovery Time
● High Forward Current
SOT- 23
3
Applications
● Extreme fast switches
2
1
Marking:
● H9
Symbol
VR
IO
IFM
IFSM
PD
RθJA
Tj
Tstg
Parameter
DC Blocking Voltage
Forward Continuous Current
Peak Forward Current
Non-repetitive Peak Forward Surge Current@t=8.3ms
Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
20
500
1.5
5
200
500
125
-55~+150
Unit
V
mA
A
A
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Reverse recovery time
Symbol
V(BR)
IR
VF
Ctot
trr
Test conditions
IR=100μA
VR=10V
VR=20V
IF=10mA
IF=100mA
IF=500mA
VR=0V, f=1MHz
IF= IR=50mA, VR=6V
Min Typ Max Unit
20
V
20
μA
100
0.35
0.43
V
0.55
120
pF
20
ns
High Diode Semiconductor
1