1SS193 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

1SS193
SOT-23 Plastic-Encapsulate Diodes
Switching Diodes
Features
● Low forward voltage
● Fast reverse recovery time
SOT- 23
3
Applications
● Extreme fast switches
Marking:
● F3
2
1
1
3
2
Parameter
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
V_RM
V_R
I_FM
I_O
I_FSM
P_D
R_θJA
T_J
T_STG
Limit
85
80
300
100
2.0
150
833
150
-55~+150
Unit
V
V
mA
mA
A
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol Min Typ Max Unit
Reverse breakdown voltage
V_(BR)
80
V
V_F1
0.60
V
Forward voltage
V_F2
V_F3
I_R1
Reverse current
I_R2
Capacitance between terminals
C_T
0.72
V
0.90 1.2
V
0.1
uA
0.5
uA
0.9
3.0
pF
Reverse recovery time
t _rr
1.6
4.0
ns
Conditions
I_R=100μA
I_F=1mA
I_F=10mA
I_F=100mA
V_R=30V
V_R=80V
V_R=0,f=1MHz
I_F=I_R=10mA,I_rr=0.1×I_R
High Diode Semiconductor
1