1N5817W Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features
● _{VR 20-40V}
● I_{FAV 1A}
Applications
● Rectifier
1N5817W THRU 1N5819W
SOT-23-3L Plastic-Encapsulate Diodes
Schottky Rectifier
SOT- 23 - 3 L
Marking Code: 1N5817W: SJ
1N5818W: SK
1N5819W: SL
Item
Symbol ^Unit
Conditions
17W
Repetitive Peak Reverse Voltage VRRM
V
20
Maximum RMS Voltage
V_RMS
V
14
Average Forward Current
I_F(AV)
A
60Hz Half-sine wave, Resistance
load, Ta=75℃
Surge(Non-repetitive)Forward
Current
I_FSM
A
60Hz Half-sine wave,1 cycle,
Ta=25℃
Junction Temperature
T_J
℃
Storage Temperature
T_STG
℃
Power Dissipation
P tot
mW
1N58
18W
30
21
19W
40
28
1.0
15
-55~+150
-55 ~ +150
450
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Item
Symbol _Unit
Test Condition
Peak Forward
Voltage
Peak Reverse
Current
Thermal
Resistance(Typical)
V_FM
I_RRM1
I_RRM2
R_θJ-A
R_θJ-L
V
mA
℃/W
I_FM=1.0A
V_RM=V_RRM
Ta=25℃
Ta=125℃
Between junction and ambient
Between junction and lead
17W
0.45
1N58
18W
19W
0.55
1.0
10
50
15
High Diode Semiconductor
1