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| RFP30N06LE Datasheet, PDF (2/6 Pages) Harris Corporation – 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs | |||
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Speciï¬cations RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
Electrical Speciï¬cations TC = +25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
tD(ON)
tR
tD(OFF)
tF
tOFF
QG(TOT)
QG(5)
QG(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = 60V,
VGS = 0V
TC = +25oC
TC = +150oC
VGS = +10, -8V
ID = 30A, VGS = 5V
VDD = 30V, ID = 30A,
RL = 1â¦, VGS = 5V,
RGS = 2.5â¦
VGS = 0V to 10V
VGS = 0V to 5V
VDD = 48V,
ID = 30A,
RL = 1.6â¦
VGS = 0V to 1V
VDS = 25V, VGS = 0V,
f = 1MHz
MIN
TYP MAX UNITS
60
-
-
V
1
-
2
V
-
-
1
µA
-
-
50
µA
-
-
10
µA
-
-
0.047
â¦
-
-
140
ns
-
11
-
ns
-
88
-
ns
-
30
-
ns
-
40
-
ns
-
-
100
ns
-
51
62
nC
-
28
34
nC
-
1.8
2.6
nC
-
1350
-
pF
-
290
-
pF
-
85
-
pF
-
-
1.55 oC/W
-
-
80
oC/W
Source-Drain Diode Speciï¬cations
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
VSD
ISD = 30A
tRR
ISD = 30A, dISD/dt = 100A/µs
MIN
TYP MAX UNITS
-
-
1.5
V
-
-
125
ns
5-46
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