IRF510 Datasheet, PDF (1/7 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS Power FETs

Semiconductor
January 1998
IRF510, IRF511,
IRF512, IRF513
4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm,
N-Channel Power MOSFETs
Features
• 4.9A, and 5.6A, 80V and 100V
• r_DS(ON) = 0.54Ω and 0.74Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF510
TO-220AB
IRF510
IRF511
TO-220AB
IRF511
IRF512
TO-220AB
IRF512
IRF513
TO-220AB
IRF513
NOTE: When ordering, include the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17441.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number 1573.2