HGTP3N60C3D_07 Datasheet, PDF (1/11 Pages) Harris Corporation – 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGTP3N60C3D, HGT1S3N60C3D,
SEMICONDUCTOR
HGT1S3N60C3DS
May 1996
6A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
Features
• 6A, 600V at T_C = +25^oC
• 600V Switching SOA Capability
• Typical Fall Time - 130ns at T_J = +150^oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
COLLECTOR (FLANGE)
EMITTER
COLLECTOR
GATE
Description
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
+25^oC and +150^oC. The IGBT used is the development type
TA49113. The diode used in anti-parallel with the IGBT is the
development type TA49055.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
PACKAGING AVAILABILITY
JEDEC TO-262AA
EMITTER
COLLECTOR
(FLANGE)
COLLECTOR
GATE
JEDEC TO-263AB
M
A
GATE
EMITTER
COLLECTOR
(FLANGE)
PART NUMBER
HGTP3N60C3D
HGT1S3N60C3D
HGT1S3N60C3DS
PACKAGE
TO-220AB
TO-262AA
TO-263AB
BRAND
G3N60C3D
G3N60C3D
G3N60C3D
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. HGT1S3N60C3DS9A.
G
Formerly Developmental Type TA49119.
E
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES
Collector Current Continuous
At
At
T_C
T_C
=
=
+25^oC .
+110^oC
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. I_C25
I_C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . .
Switching Safe Operating Area at T_J = +150^oC, Fig.
...
14.
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V_GEM
SSOA
Power Dissipation Total at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > +25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Short Circuit Withstand Time (Note 2) at V_GE = 10V, Fig 6 . . . . . . . . . . . . . . . . . . . . .t_SC
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V_CE(PK) = 360V, T_J = +125^oC, R_GE = 82Ω.
HGTP3N60C3D, HGT1S3N60C3D
HGT1S3N60C3DS
600
6
3
24
±20
±30
18A at 480V
33
0.27
-40 to +150
260
8
UNITS
V
A
A
A
V
V
W
W/ ^oC
o_C
o_C
µs
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1996
1
File Number 4140