HGTG40N6 Datasheet, PDF (1/6 Pages) Harris Corporation – 70A, 600V, UFS Series N-Channel IGBT

HGTG40N60B3 S E M I C O N D U C T O R
PRELIMINARY
May 1995
70A, 600V, UFS Series N-Channel IGBT
Features
• 70A, 600V at T_C = +25^oC
• Square Switching SOA Capability
• Typical Fall Time - 160ns at +150^oC
• Short Circuit Rating
• Low Conduction Loss
Package
JEDEC STYLE TO-247
E
C
G
Description
The HGTG40N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25^oC and +150^oC.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG40N60B3
TO-247
G40N60B3
NOTE: When ordering, use the entire part number.
Formerly Developmental Type TA49052
C
G
E
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES
Collector-Gate Voltage, R_GE = 1MΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CGR
Collector Current Continuous
At T_C = +25^oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25
At T_C = +110^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM
Switching Safe Operating Area at T_C = +150^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Short Circuit Withstand Time (Note 2) at V_GE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
Short Circuit Withstand Time (Note 2) at V_GE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V_CE(PK) = 360V, T_C = +125^oC, R_GE = 25Ω.
HGTG40N60B3
600
600
70
40
330
±20
±30
160A at 0.8 BV_CES
290
2.33
-40 to +150
260
2
10
UNITS
V
V
A
A
A
V
V
W
W/^oC
o_C
o_C
µs
µs
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995
9-3
File Number 3943