HGTG30N60C3D Datasheet, PDF (1/8 Pages) Intersil Corporation – 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

HGTG30N60C3D S E M I C O N D U C T O R
August 1995
63A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
Features
• 63A, 600V at T_C = +25^oC
• Typical Fall Time - 230ns at T_J = +150^oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Package
JEDEC STYLE TO-247
E
C
G
Description
The HGTG30N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOS-
FET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between +25^oC and +150^oC. The IGBT used is the development
type TA49051. The diode used in anti-parallel with the IGBT is
the development type TA49053.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG30N60C3D TO-247
G30N60C3D
NOTE: When ordering, use the entire part number.
Formerly Developmental Type TA49014.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES
Collector Current Continuous
At T_C = +25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25
At T_C = +110^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110
Average Diode Forward Current at +110^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM
Switching Safe Operating Area at T_J = +150^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Short Circuit Withstand Time (Note 2) at V_GE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
Short Circuit Withstand Time (Note 2) at V_GE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V_CE(PK) = 360V, T_J = +125^oC, R_GE = 25Ω.
HGTG30N60C3D
600
63
30
25
252
±20
±30
60A at 600V
208
1.67
-40 to +150
260
4
15
UNITS
V
A
A
A
A
V
V
W
W/^oC
o_C
o_C
µs
µs
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,641,162
4,598,461
4,644,637
4,605,948
4,682,195
4,618,872
4,684,413
4,620,211
4,694,313
4,631,564
4,717,679
4,639,754
4,743,952
4,639,762
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,969,027
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995
1
File Number 4041