HGTG12N60C3D Datasheet, PDF (1/7 Pages) Harris Corporation – 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGTG12N60C3D S E M I C O N D U C T O R
January 1997
24A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
Features
• 24A, 600V at T_C = 25^oC
• Typical Fall Time . . . . . . . . . . . . . . 210ns at T_J = 150^oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Package
JEDEC STYLE TO-247
E
C
G
Description
The HGTG12N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOS-
FET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between 25^oC and 150^oC. The IGBT used is the development
type TA49123. The diode used in antiparallel with the IGBT is
the development type TA49061.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG12N60C3D TO-247
G12N60C3D
NOTE: When ordering, use the entire part number.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Formerly Developmental Type TA49117.
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES
Collector Current Continuous
At T_C = 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25
At T_C = 110^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110
Average Diode Forward Current at 110^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM
Switching Safe Operating Area at T_J = 150^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T_C = 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > 25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Short Circuit Withstand Time (Note 2) at V_GE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
Short Circuit Withstand Time (Note 2) at V_GE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V_CE(PK) = 360V, T_J = 125^oC, R_GE = 25Ω.
HGTG12N60C3D
600
24
12
15
96
±20
±30
24A at 600V
104
0.83
-40 to 150
260
4
13
UNITS
V
A
A
A
A
V
V
W
W/^oC
o_C
o_C
µs
µs
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
3-35
File Number 4043.1