HGTD7N60C3 Datasheet, PDF (1/6 Pages) Harris Corporation – 14A, 600V, UFS Series N-Channel IGBTs

HGTD7N60C3,
S E M I C O N D U C T O R _{HGTD7N60C3S, HGTP7N60C3}
January 1997
14A, 600V, UFS Series N-Channel IGBTs
Features
• 14A, 600V at T_C = 25^oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 140ns at T_J = 150^oC
• Short Circuit Rating
• Low Conduction Loss
Description
The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are
MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
between 25^oC and 150^oC.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls,
power supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTD7N60C3
TO-251AA
G7N60C
HGTD7N60C3S
TO-252AA
G7N60C
HGTP7N60C3
TO-220AB
G7N60C3
NOTE: When ordering, use the entire part number.
Add the suffix 9A to obtain the TO-252AA variant in tape and
reel, i.e. HGTD7N60C3S9A.
Formerly Developmental Type TA49115.
Packaging
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR (FLANGE)
JEDEC TO-251AA
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
JEDEC TO-252AA
GATE
EMITTER
COLLECTOR
(FLANGE)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
HGTD7N60C3, HGTD7N60C3S
HGTP7N60C3
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES
Collector Current Continuous
At T_C = 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25
At T_C = 110^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM
Switching Safe Operating Area at T_J = 150^oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T_C = 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_ARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Short Circuit Withstand Time (Note 2) at V_GE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
Short Circuit Withstand Time (Note 2) at V_GE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
NOTES:
600
14
7
56
±20
±30
40A at 480V
60
0.48
100
-40 to 150
260
1
8
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V_CE(PK) = 360V, T_J = 125^oC, R_GE = 50Ω.
UNITS
V
A
A
A
V
V
W
W/^oC
mJ
o_C
o_C
µs
µs
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1997
3-16
File Number 4141.2