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| BUZ41A Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | |||
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Semiconductor
Data Sheet
BUZ41A
October 1998 File Number 2256.1
4.5A, 500V, 1.500 Ohm, N-Channel Power
Features
[ /Title
(BUZ41
A)
/Sub-
MOSFET
This is an N-Channel enhancement mode silicon gate power
ï¬eld effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
⢠4.5A, 500V
⢠rDS(ON) = 1.500â¦
⢠SOA is Power Dissipation Limited
⢠Nanosecond Switching Speeds
ject
(4.5A,
500V,
1.500
Ohm,
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17415.
Ordering Information
⢠Linear Transfer Characteristics
⢠High Input Impedance
⢠Majority Carrier Device
⢠Related Literature
N-Chan- PART NUMBER
PACKAGE
nel
BUZ41A
TO-220AB
BRAND
BUZ41A
- TB334 âGuidelines for Soldering Surface Mount
Components to PC Boardsâ
Power NOTE: When ordering, use the entire part number.
Symbol
MOS-
D
FET)
/Author
()
G
/Key-
words
S
(Harris
Semi-
conduc- Packaging
tor, N-
Chan-
JEDEC TO-220AB
nel
Power
MOS-
FET,
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
TO-
220AB)
/Cre-
ator ()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/Use-
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
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