HMS1M32M8L Datasheet, PDF (6/7 Pages) Hanbit Electronics Co.,Ltd – SRAM MODULE 4Mbyte(1Mx32Bit) ,LOW POWER,72Pin SIMM,5V

HANBit
FUNCTIONAL DESCRIPTION
/CE
/WE
/OE
H
X*
X
L
H
H
L
H
L
L
L
X
Note: X means Don't Care
MODE
Not Select
Output Disable
Read
Write
HMS1M32M8L
I/O PIN
High-Z
High-Z
D_OUT
D_IN
SUPPLY CURRENT
l _SB, l _SB1
l_CC
l_CC
l_CC
DATA RETENTION CHARACTERISTICS* (TA = 0 to 70 ℃ )
PARAMETER
V_CC for Data Retention
SYMBOL
V_DR
TEST CONDITION
/CE≥ V_CC-0.2V
Data Retention Current
I_DR
Data Retention Set-up Time
t_SDR
Recovery Time
t_RDR
* L-Version Only
V_CC=3.0V, /CE≥ V_CC-0.2V
V_IN≥ V_CC-0.2V or V_IN≤ 0.2V
See Data Retention
Wave forms(below)
MIN
MAX
2
5.5
-
400
0
-
5
-
UNIT
V
µA
ns
ns
DATA RETENTION WAVEFORM 1 (/CE Controlled)
Vcc
4.5V
2.2V
V_DR
t_SDR
Data Retention Mode
t_RDR
/CE
/CE≥ Vcc- 0.2V
Vss
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
6
HANBit Electronics Co.,Ltd.