HMF6M32M6VA Datasheet, PDF (6/13 Pages) Hanbit Electronics Co.,Ltd – FLASH-ROM MODULE 24MByte (6M x 32-Bit) ,72pin-SIMM, 3.0V

HANBit
CHARACTERISTICS
u Erase / Program Operations
PARAMETER SYMBOLS
JEDEC
Standard
DESCRIPTION
tAVAV
tAVWL
tWLAX
tDVWH
tWHDX
tGHWL
tWC
Write Cycle Time (Note1)
Min
tAS
Address Setup Time
Min
tAH
Address Hold Time
Min
tDS
Data Setup Time
Min
tDH
Data Hold Time
Min
tOEPH
Output Enable High durning toggle bit polling
Min
Read Recovery Time Before Write(/OE High to /WE
tGHWL
Min
Low)
tELWL
tCS
/CE Setup Time
Min
tWHEH
tCH
/CE Hold Time
Min
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
tWHWH1
tWHWH1
Programming Operation (Note2)
Word
Typ
tWHWH2
tWHWH2
Sector Erase Operation (Note2)
Typ
tVCS
Vcc Setup Time (Note1)
Min
tRB
Recovery Time from RY//BY
Min
tBUSY
Program/ Erase Valid to RY//BY Delay
Min
Note:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more Information
u Alternate /CE Controlled Erase/ Program Operations
PARAMETER SYMBOLS
JEDEC
Standard
DESCRIPTION
tAVAV
tAVEL
tELAX
tDVEH
tEHDX
tGHEL
tWC
tAS
tAH
tDS
tDH
tOES
tGHEL
Write Cycle Time (Note1)
Min
Address Setup Time
Min
Address Hold Time
Min
Data Setup Time
Min
Data Hold Time
Min
Output Enable Setup Time
Min
Read Recovery Time Before Write(/OE High to /WE
Min
Low)
tWLEL
tWS
/WE Setup Time
Min
URL:www.hbe.co.kr
6
REV.02(August,2002)
HMF6M32M6VA
-90
-120 UNIT
90
120
ns
0
ns
45
50
ns
45
50
ns
0
ns
20
ns
0
ns
0
ns
0
ns
35
50
ns
30
ns
11
us
1.6
sec
50
us
0
ns
90
ns
-90
-120 UNIT
90
120
ns
0
ns
45
50
ns
45
50
ns
0
ns
20
ns
0
ns
0
ns
HANBit Electronics Co., Ltd.