HMS2M32M16V Datasheet, PDF (4/8 Pages) Hanbit Electronics Co.,Ltd – SRAM MODULE 8Mbyte (2M x 32-Bit), 3.3V 72-Pin SIMM Design

HANBit
HMS2M32M16V/Z16V
RECOMMENDED DC OPERATING CONDITIONS ( TA=0 to 70 ^o C )
PARAMETER
SYMBOL
MIN
TYP.
Supply Voltage
V_CC
3.0V
3.3V
Ground
V_SS
0
0
Input High Voltage
V_IH
2.0
-
Input Low Voltage
V_IL
-0.3*
-
* V_IL(Min.) = -2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA
** V_IH(Min.) = Vcc+2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA
MAX
3.6V
0
Vcc+0.3V**
0.8V
DC AND OPERATING CHARACTERISTICS (1)(0oC ≤ TA ≤ 70 ^oC ; Vcc = 3.3V ± 0.3V )
PARAMETER
TEST CONDITIONS
SYMBOL MIN MAX
UNITS
Input Leakage Current
V_IN = Vss to Vcc
IL_I
-32
32
µA
Output Leakage Current
Output High Voltage
Output Low Voltage
* Vcc=3.3V, Temp=25 ^oC
/CE=V_{IH or /}OE =V_IH or /WE=V_IL
V_OUT=Vss to V_CC
I_OH = -4.0Ma
I_OL = 8.0mA
IL₀
-32
32
µA
V_OH
2.4
V
V_OL
0.4
V
DC AND OPERATING CHARACTERISTICS (2)
DESCRIPTION
TEST CONDITIONS
SYMBOL
Min. Cycle, 100% Duty
Power Supply
/CE=V_IL, V_IN=V_IH or V_IL,
l_CC
Current: Operating
I_OUT=0mA
Power Supply
Min. Cycle, /CE=V_IH
l_SB
Current: Standby
f=0MHZ, /CE≥V_CC-0.2V,
V_IN≥ V_CC-0.2V or V_IN≤0.2V
l_SB1
-10
2960
800
160
MAX
-12
-15
2880 2800
800
800
160
160
UNIT
mA
mA
mA
CAPACITANCE
DESCRIPTION
Input /Output Capacitance
Input Capacitance
TEST CONDITIONS
V_I/O=0V
V_IN=0V
* NOTE : Capacitance is sampled and not 100% tested
SYMBOL
C_I/O
C_IN
MAX
128
112
UNIT
pF
pF
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
4
HANBit Electronics Co.,Ltd.