HMS12832M4V Datasheet, PDF (4/6 Pages) Hanbit Electronics Co.,Ltd – SRAM MODULE 512KByte (128K x 32-Bit) 3.3V, 64Pin-SIMM

HANBit
HMS12832M4V
CAPACITANCE (TA =25 ^oC , f= 1.0Mhz)
DESCRIPTION
TEST CONDITIONS
Input /Output Capacitance
V_I/O=0V
Input Capacitance
V_IN=0V
* NOTE : Capacitance is sampled and not 100% tested
SYMBOL
C_I/O
C_IN
MAX
32
24
UNIT
PF
PF
AC CHARACTERISTICS (0oC ≤ TA ≤ 70 ^oC ; Vcc = 3.3V ± 0.3V, unless otherwise specified)
Test conditions
PARAMETER
VALUE
Input Pulse Level
0V to 3V
Input Rise and Fall Time
3ns
Input and Output Timing Reference Levels
1.5V
Output Load
See below
Output Load (A)
VL=1.5V
Output Load (B)
for t_HZ, t_LZ, t_WHZ, t_OW, t_OLZ & t_OHZ
+3.3V
DOUT
Z0=50Ω
50Ω
30pF
DOUT
353Ω
319Ω
5pF*
READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Output
Output Enable to Low-Z Output
Chip Enable to Low-Z Output
Output Disable to High-Z Output
Chip Disable to High-Z Output
Output Hold from Address Change
Chip Select to Power Up Time
Chip Select to Power Down Time
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002).
SYMBOL
t_RC
t_AA
t_CO
t_OE
t_OLZ
t_LZ
t_OHZ
t_HZ
t_OH
t_PU
t_PD
-10
MIN MAX
10
10
10
5
0
3
0
5
0
5
3
0
-
10
-12
MIN MAX
12
12
12
6
0
3
0
6
0
6
3
0
12
-15
MIN MAX
15
15
15
7
0
3
0
7
0
7
3
0
15
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4
HANBit Electronics Co.,Ltd.