HMF4M32B8VG Datasheet, PDF (4/12 Pages) Hanbit Electronics Co.,Ltd – FLASH-ROM MODULE 16MByte (4M x 32-Bit) ,72pin-SODIMM, 3.3V

HANBit
HMF4M32B8VG
Vcc Active Read Current /CE=VIL, /OE=VIL 5MHZ
ICC1
(Note1)
All Outputs open 1MHZ
9
16
mA
2
4
Vcc Active Write Current
ICC2
/CE=VIL, /OE=VIH
(Note 2 and 4)
20
30
mA
ICC3
Vcc Standby Current
Vcc=Vcc max ; /CE,Reset=Vcc±0.3V
0.2
5
uA
Vcc Standby Current
ICC4
Vcc=Vcc max ; /Reset=Vcc±0.3V
During Reset
0.2
5
uA
Automatic Sleep
ICC5
Mode(Note3)
VIH=Vcc±0.3V;
VIL=Vss±0.3V
0.2
5
uA
VIL
Input Low Voltage
-0.5
0.8
V
VIH
Input High Voltage
0.7xVcc
Vcc+0.3 V
Voltage for Autoselect
VID
Vcc=3.3V
and Temporary Unprotect
11.5
12.5
V
VOL
Output Low Voltage
IOL=4.0mA, Vcc=Vcc min
0.45
V
VOH1
IOH=-2.0mA, Vcc=Vcc min
0.85xVcc
V
Output High Voltage
VOH2
IOH=-100uA, Vcc= Vcc min
Vcc-0.4
V
VLKO
Low Vcc Lock-Out
Voltage
2.3
2.5
V
Notes :
1. The Icc current listed includes both the DC operating current ane the frequency dependent component(at 5 MHz).
The read current is typically 9mA (@VCC=3.0V. /OE at V1H )
2. Icc active while Embedded Erase or Embedded Program is progress.
3. Automatic sleep mode enables the low power mode when adder sses remain stable for tACC+30ns. Typical
sleep mode current is 200nA.
4. Not 100% tested.
ERASE AND PROGRAMMING PERFORMANCE
PARAMETER
TYP
MAX
UNIT
COMMENTS
Block Erase Time
0.7
Chip Erase Time
25
Byte Programming Time
9
Word Programming Time
11
Chip Programming Time ^{Byte Mode}
18
Word Mode
12
15
sec Excludes 00h programming prior to
-
sec erasure
300
us
360
us
54
sec ^{Excludes system level overhead}
36
sec
Notes :
1. 25^OC, Vcc=3.0V, 100,000 cycles, typical pattern.
2. System-level overhead is defined as the time required to excute the four-bus-cycle command necessary to program
URL: www.hbe.co.kr
4
HANbit Electronics Co., Ltd.
REV.02(August,2002)