HMF2M64F8VA Datasheet, PDF (4/13 Pages) Hanbit Electronics Co.,Ltd – FLASH-ROM MODULE 16MByte (2M x 64-Bit) ,120PIN SMM,3.3V

HANBit
HMF2M64F8VA
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE or ERASE
NOTE: X means don’t care
/OE
/CE
/WE
X
Vcc± 0.3
X
H
L
H
L
L
H
H
L
L
DQ
HIGH-Z
HIGH-Z
Dout
Din
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
Voltage with respect to ground all other pins
VIN,OUT
-0.5V to +0.5V
Voltage with respect to ground Vcc
VCC
-0.5V to +4.0V
Storage Temperature
TSTG
-65oC to +150oC
Operating Temperature
TA
-55Oc to +125oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
Vcc for ±5% device Supply Voltages
VCC
3.0V
Vcc for ± 10% device Supply Voltages
Vcc
2.7V
Ground
VSS
0
TYP.
0
MAX
3.6V
3.6V
0
DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 ^oC ; Vcc = 5V ± 0.5V )
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
MAX
Input Leakage Current
Vcc=Vcc max, VIN= GND to Vcc
IL1
±1.0
Output Leakage Current
Vcc=Vcc max, VOUT= GND to Vcc
IL0
±1.0
Output High Voltage
IOH = -2.5mA, Vcc = Vcc min
0.85*
VOH
VCC
Output Low Voltage
Vcc Active Current for Read(1)
Vcc Active Current for Program
or Erase(2)
IOL = 12mA, Vcc =Vcc min
/CE = VIL, /OE=VIH,
/CE = VIL, /OE=VIH
VOL
0.45
ICC1
72
128
ICC2
160
240
Vcc Standby Current
/CE= VIH
ICC3
1.6
40
Low Vcc Lock-Out Voltage
Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH.
2. Icc active while embedded algorithm (program or erase) is in progress
VLKO
2.3
2.5
3. Maximum Icc current specifications are tested with Vcc=Vcc max
UNITS
µA
µA
V
V
mA
mA
mA
V
URL:www.hbe.co.kr
REV.02(August,2002)
4
HANbit Electronics Co., Ltd.