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HMD8M32M4G Datasheet, PDF (4/7 Pages) Hanbit Electronics Co.,Ltd – 32Mbyte(8Mx32) 72-pin SIMM, FP Mode, 4K Ref. 5V
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HANBit
HMD8M32M4G
ICC4 : Fast Page Mode Current * (/RAS=VIL, /CAS, Address cycling @tPC=min )
ICC5 : Standby Current (/RAS=/CAS=Vcc-0.2V )
ICC6 : /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @tRC=min )
IIL : Input Leakage Current (Any input 0V ≤ VIN ≤ 6.5V, all other pins not under test = 0V)
IOL : Output Leakage Current (Data out is disabled, 0V ≤ VOUT ≤ 5.5V
VOH : Output High Voltage Level (IOH= -5mA )
VOL : Output Low Voltage Level (IOL = 4.2mA )
* NOTE: ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the
output open. ICC is specified as an average current. In ICC1 and ICC3, address cad be changed maximum once
while /RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle.
CAPACITANCE
o
( TA=25 C, Vcc = 5V, f = 1Mz )
DESCRIPTION
Input Capacitance (A0-A11)
Input Capacitance (/W)
Input Capacitance (/RAS0)
Input Capacitance (/CAS0-/CAS3)
Input/Output Capacitance (DQ0-31)
SYMBOL
CIN1
C IN2
CIN3
CIN4
CDQ1
MIN
-
-
-
-
-
MAX
100
130
40
30
20
UNITS
PF
PF
pF
pF
pF
AC CHARACTERISTICS
(
0
o
C
≤
TA
≤
70oC
,
Vcc
=
5V±10%,
See
notes
1,2.)
STANDARD OPERATION
Random read or write cycle time
Access time from /RAS
Access time from /CAS
Access time from column address
/CAS to output in Low-Z
Output buffer turn-off delay
Transition time (rise and fall)
/RAS precharge time
/RAS pulse width
/RAS hold time
/CAS hold time
/CAS pulse width
/RAS to /CAS delay time
/RAS to column address delay time
/CAS to /RAS precharge time
Row address set-up time
Row address hold time
URL:www.hbe.co.kr
REV.1.0 (August.2002)
SYMBOL
MIN
tRC
90
tRAC
tCAC
tAA
tCLZ
0
tOFF
0
tT
3
tRP
30
tRAS
50
tRSH
13
tCSH
50
tCAS
13
tRCD
20
tRAD
15
tCRP
5
tASR
0
tRAH
10
-4-
-5
MAX MIN
110
50
13
25
0
13
0
50
3
40
10K
60
15
60
10K
15
37
20
25
15
5
0
10
-6
MAX
60
15
30
13
50
10K
10K
45
30
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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