HMD8M32F4E Datasheet, PDF (4/6 Pages) Hanbit Electronics Co.,Ltd – 32Mbyte(8Mx32) EDO Mode 4K Ref. 100Pin SMM, 5V Design

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HMD8M32F4E
I_CC5 : Standby Current (/RAS=/CAS=Vcc-0.2V )
I_CC6 : /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t_RC=min )
I_IL : Input Leakage Current (Any input 0V ≤ V_IN ≤ 6.5V, all other pins not under test = 0V)
I_OL : Output Leakage Current (Data out is disabled, 0V ≤ V_OUT ≤ 5.5V
V_OH : Output High Voltage Level (I_OH= -5mA )
V_OL : Output Low Voltage Level (I_OL = 4.2mA )
* NOTE: I_CC1, I_CC3, I_CC4 and I_CC6 are dependent on output loading and cycle rates. Specified values are obtained with
the output open. I_CC is specified as an average current. In I_CC1 and I_CC3, address cad be changed maximum
once while /RAS=V_IL. In I_CC4, address can be changed maximum once within one page mode cycle.
CAPACITANCE
o
( T_A=25 C, Vcc = 5V, f = 1Mz )
DESCRIPTION
SYMBOL
MIN
MAX
UNITS
Input Capacitance (A0-A11)
Input Capacitance (/WE)
Input Capacitance (/RAS0-/RAS3)
Input Capacitance (/CAS0-/CAS3)
Input/Output Capacitance (DQ0-31)
C_IN1
-
C _IN2
-
C_IN3
-
C_IN4
-
C_DQ1
-
100
pF
130
pF
40
pF
30
pF
20
pF
AC CHARACTERISTICS
(
0
o
C
≤
T_A
≤
70oC
,
Vcc
=
5V±10%,
See
notes
1,2.)
STANDARD OPERATION
SYMBOL
-5
MIN
MAX
-6
MIN
MAX
Random read or write cycle time
Access time from /RAS
Access time from /CAS
Access time from column address
/CAS to output in Low-Z
Output buffer turn-off delay
Transition time (rise and fall)
/RAS precharge time
/RAS pulse width
/RAS hold time
/CAS hold time
/CAS pulse width
/RAS to /CAS delay time
/RAS to column address delay time
/CAS to /RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
t_RC
90
110
t_RAC
50
60
t_CAC
13
15
t_AA
25
30
t_CLZ
3
3
t_OFF
3
13
3
13
t_T
2
50
2
50
t_RP
30
40
t_RAS
50
10K
60
10K
t_RSH
13
15
t_CSH
38
45
t_CAS
8
10K
10
10K
t_RCD
20
37
20
45
t_RAD
15
25
15
30
t_CRP
5
5
t_ASR
0
0
t_RAH
10
10
t_ASC
0
0
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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