HSD8M32M4V Datasheet, PDF (3/10 Pages) Hanbit Electronics Co.,Ltd – Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) 72pin-SIMM based on 16Mx8, 4Banks, 4K Ref., 3.3V

HANBit
HSD8M32M4V
PIN FUNCTION DESCRIPTION
Pin
Name
Input Function
CLK
System clock
Active on the positive going edge to sample all inputs.
/CE
Chip enable
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
CKE
Clock enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
CKE should be enabled 1CLK+tSS prior to valid command.
A0 ~ A11
Address
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA11, Column address : CA0 ~ CA8
BA0 ~ BA1
Bank select address Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
/RAS
Row address strobe Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
/CAS
Column address Latches column addresses on the positive going edge of the CLK with CAS low.
strobe
Enables column access.
/WE
Write enable
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
DQM0 ~ 3
Data input/output Makes data output Hi-Z, tSHZ after the clock and masks the output.
mask
Blocks data input when DQM active. (Byte masking)
DQ0 ~ 31
Data input/output
Data inputs/outputs are multiplexed on the same pins.
VDD/VSS
Power
Power and ground for the input buffers and the core logic.
supply/ground
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
V_{IN ,OUT}
Vcc
-1V to 4.6V
-1V to 4.6V
Power Dissipation
Storage Temperature
P_D
T_STG
4W
-55oC to 150oC
Short Circuit Output Current
I_OS
50mA
Notes :
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
URL:www.hbe.co.kr
REV.1.0 (August.2002)
-3-
HANBit Electronics Co.,Ltd.