HSD8M64D8A Datasheet, PDF (1/10 Pages) Hanbit Electronics Co.,Ltd – Synchronous DRAM Module 64Mbyte (8Mx64bit),DIMM, 4Banks, 4K Ref., 3.3V

HANBit
HSD8M64D8A
Synchronous DRAM Module 64Mbyte (8Mx64bit),DIMM, 4Banks, 4K
Ref., 3.3V
Part No. HSD8M64D8A
GENERAL DESCRIPTION
The HSD8M64D8A is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of
eight CMOS 2M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy substrate.
Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD8M64D8A
is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets. Synchronous
design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range
of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high
performance memory system applications All module components may be powered from a single 3.3V DC power supply
and all inputs and outputs are LVTTL-compatible.
FEATURES
• Part Identification
HSD8M64D8A-F/10H : 100MHz (CL=2&3)
HSD8M64D8A-F/10L : 100MHz (CL=3)
HSD8M64D8A-F/10 : 100MHz (CL=2)
HSD8M64D8A-F/13 : 133MHz (CL=3)
F means Auto & Self refresh with Low-Power (3.3V)
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 2M x 8bit x 4Banks SDRAM
URL : www.hbe.co.kr
REV.1.0(August.2002)
- 1-
HANBit Electronics Co.,Ltd.