HSD8M32B4 Datasheet, PDF (1/11 Pages) Hanbit Electronics Co.,Ltd – Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) 144pin SO-DIMM based on 4Mx16, 4Banks, 4K Ref., 3.3V

HANBit
HSD8M32B4
Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) 144pin SO-DIMM based on
4Mx16, 4Banks, 4K Ref., 3.3V
Part No. HSD8M32B4
GENERAL DESCRIPTION
The HSD8M32B4 is a 8M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists of
four CMOS 1M x 16 bit x 4banks Synchronous DRAMs in TSOP-II packages mounted on a 144-pin, FR-4-printed circuit
board. Two 0.01uF decoupling capacitor is mounted on the printed circuit board in parallel for each SDRAM. The
HSD8M32B4 is a SO-DIMM designed. Synchronous design allows precise cycle control with the use of system clock. I/O
transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same
device to be useful for a variety of high bandwidth, high performance memory system applications All module components
may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
• Part Identification
HSD8M32B4-10 : 100MHz ( CL=2)
HSD8M32B4-10L : 100MHz ( CL=3)
HSD8M32B4-12 : 125MHz ( CL=3)
HSD8M32B4-13 :133MHz ( CL=3)
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge
of the system clock
• FR4-PCB design
• The used device is K4S641632D-TC
URL:www.hbe.co.kr
REV.1.0 (August.2002).
- 1-
HANBit Electronics Co.,Ltd