HSD4M64B4W Datasheet, PDF (1/10 Pages) Hanbit Electronics Co.,Ltd – Synchronous DRAM Module 32Mbyte(4Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V

HANBit
HSD4M64B4W
Synchronous DRAM Module 32Mbyte(4Mx64-Bit), 144pin SO-DIMM,
4Banks, 4K Ref., 3.3V
Part No. HSD4M64B4W
GENERAL DESCRIPTION
The HSD4M64B4W is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of
four CMOS 1M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.
Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The
HSD4M64B4W is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge
connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are
possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be
useful for a variety of high bandwidth, high performance memory system applications All module components may be
powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
• Part Identification
HSD4M64B4W-10 : 100MHz (CL=2)
HSD4M64B4W-10L : 100MHz (CL=3)
HSD4M64B4W-12 : 125MHz (CL=3)
HSD4M64B4W-13 : 133MHz (CL=3)
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 1M x 16bit x 4Banks SDRAM
URLwww.hbe.co.kr
Rev.0.0 (March / 2002)
1
HANBit Electronics Co.,Ltd.