HSD32M64D8KP Datasheet, PDF (1/29 Pages) Hanbit Electronics Co.,Ltd – Synchronous DRAM Module 256Mbyte (32Mx64bit),DIMM Unbuffered with Based on Stacked 16Mx8, 4Banks, 4K Ref., 3.3V

HANBit
HSD32M64D8KP
Synchronous DRAM Module 256Mbyte (32Mx64bit),DIMM Unbuffered with Based on
Stacked 16Mx8, 4Banks, 4K Ref., 3.3V
Part No. HSD32M64D8KP
GENERAL DESCRIPTION
The HSD32M64D8KP is a 32M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists
of sixteen CMOS 16M x 8 bit(stacking chip) with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin
glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each
SDRAM. The HSD32M64D8KP is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge
connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are
possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be
useful for a variety of high bandwidth, high performance memory system applications All module components may be
powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
• Part Identification
HSD32M64D8KP – 10L
HSD32M64D8KP – 13
: 100MHz ( CL=3)
: 133MHz ( CL=3)
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 4M x 8bit x 4Banks SDRAM
URL:www.hbe.co.kr
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HANBiT Electronics Co., Ltd