HSD32M64D16R Datasheet, PDF (1/12 Pages) Hanbit Electronics Co.,Ltd – Synchronous DRAM Module 256Mbyte (32Mx64bit), DIMM with based on 16Mx8, 4Banks, 4K Ref., 3.3V

HANBit
HSD32M64D16R
Synchronous DRAM Module 256Mbyte (32Mx64bit), DIMM with based on 16Mx8,
4Banks, 4K Ref., 3.3V
Part No. HSD32M64D16R
GENERAL DESCRIPTION
The HSD32M64D16R is a 32M x 64 bit Synchronous Dynamic RAM high-density memory module. The module consists
of sixteen CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages and 2K EEPROM in 8-pin
TSSOP package on a 168-pin glass-epoxy. One 0.22uF and two 0.0022uF decoupling capacitors are mounted on the
printed circuit board in parallel for each SDRAM. The HSD32M72D18AR is a DIMM (Dual in line Memory Module) and is
intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use
of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable
latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system
applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are
LVTTL-compatible.
FEATURES
• Part Identification
HSD32M64D16R : 100MHz (CL=2, CL=3)
HSD32M64D16R : 133MHz (CL=3)
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 4M x 8bit x 4Banks SDRAM
URL:www.hbe.co.kr
REV.1.0 (August.2002).
-1-
HANBit Electronics Co.,Ltd