HSD32M64D16H Datasheet, PDF (1/10 Pages) Hanbit Electronics Co.,Ltd – Synchronous DRAM Module 256Mbyte (32Mx64bit), DIMM based on 16Mx8, 4Banks, 4K Ref., 3.3V

HANBit
HSD32M64D16H
Synchronous DRAM Module 256Mbyte (32Mx64bit), DIMM based on
16Mx8, 4Banks, 4K Ref., 3.3V
Part No. HSD32M64D16H
GENERAL DESCRIPTION
The HSD32M64D16H is a 32M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists
of sixteen CMOS 4M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy
substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The
HSD32M64D16H is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector
sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on
every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a
variety of high bandwidth, high performance memory system applications All module components may be powered from a
single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
• Part Identification
HSD32M64D16H-10 : 100MHz (CL=2)
HSD32M64D16H-10L : 100MHz (CL=3)
HSD32M64D16H-13 : 133MHz (CL=3)
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 4M x 8bit x 4Banks SDRAM
URL:www.hbe.co.kr
REV.1.0(August.2002)
-1-
HANBit Electronics Co.,Ltd.