HSD32M64B8A Datasheet, PDF (1/11 Pages) Hanbit Electronics Co.,Ltd – Synchronous DRAM Module 256Mbyte (32Mx64Bit), SO-DIMM, 4Banks, 8K Ref., 3.3V

HANBit
HSD32M64B8A
Synchronous DRAM Module 256Mbyte (32Mx64Bit), SO-DIMM,
4Banks, 8K Ref., 3.3V
Part No. HSD32M64B8A
GENERAL DESCRIPTION
The HSD32M64B8A is a 32M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists
of eight CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy
substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The
HSD32M64B8A is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge
connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are
possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be
useful for a variety of high bandwidth, high performance memory system applications All module components may be
powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
• Part Identification
HSD32M64B8A-F/10L : 100MHz (CL=3)
HSD32M64B8A-F/10 : 100MHz (CL=2)
HSD32M64B8A-F/12 : 125MHz (CL=3)
HSD32M64B8A-F/13 : 133MHz (CL=3)
F means Auto & Self refresh with Low-Power (3.3V)
• Burst mode operation
• Auto & self refresh capability (8192 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 8M x 8bit x 4Banks Synchronous DRAM
URL:www.hbe.co.kr
REV.1.0(August.2002)
1
HANBit Electronics Co.,Ltd.