HSD16M64F8K Datasheet, PDF (1/30 Pages) Hanbit Electronics Co.,Ltd – Synchronous DRAM Module 128Mbyte (16Mx64bit), SMM ,16Mx8, 4Banks, 4K Ref. 3.3V

HANBit
HSD16M64F8K
Synchronous DRAM Module 128Mbyte (16Mx64bit), SMM ,16Mx8,
4Banks, 4K Ref. 3.3V
Part No. HSD16M64F8K
GENERAL DESCRIPTION
The HSD16M64F8K is a 16M x 64 bit Synchronous Dynamic RAM high-density memory module. The module consists
of eight CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages and 2K EEPROM in 8-pin
TSSOP package on a 120-pin glass-epoxy. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in
parallel for each SDRAM. The HSD16M64F8K is a SMM(Stackable Memory Module type) .Synchronous design allows
precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating
frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high
performance memory system applications All module components may be powered from a single 3.3V DC power supply
and all inputs and outputs are LVTTL-compatible.
FEATURES
• Part Identification
HSD16M64F8K : 100MHz (CL=2 & CL=3)
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 4M x 8bit x 4Banks SDRAM
URL:www.hbe.co.kr
REV.1.0(August.2002)
-1-
HANBit Electronics Co.,Ltd.