HSD16M64D8B Datasheet, PDF (1/10 Pages) Hanbit Electronics Co.,Ltd – Synchronous DRAM Module 128Mbyte (16Mx64-Bit), DIMM, 4Banks, 4K Ref., 3.3V

HANBit
HSD16M64D8B
Synchronous DRAM Module 128Mbyte (16Mx64-Bit), DIMM,
4Banks, 4K Ref., 3.3V
Part No. HSD16M64D8B
GENERAL DESCRIPTION
The HSD16M64D8B is a 16M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists
of eight CMOS 2M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy
substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The
HSD16M64D8B is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high
bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC
power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
• Part Identification
HSD16M64D8B-10 : 100MHz ( CL=2)
HSD16M64D8B-10L : 100MHz ( CL=3)
HSD16M64D8B- 13 : 133MHz ( CL=3)
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• JEDEC standard
• All inputs are sampled at the positive going edge of the system clock
• The used device is2Mx16Bitx4Banks SDRAM
URL:www.hbe.co.kr
REV.1.0 (August.2002)
1
HANBit Electronics Co.,Ltd.