HSD16M32D4 Datasheet, PDF (1/10 Pages) Hanbit Electronics Co.,Ltd – Synchronous DRAM Module 64Mbyte(16Mx32-Bit), 100pin DIMM, 4Banks, 8K Ref., 3.3V

HANBit
HSD16M32D4
Synchronous DRAM Module 64Mbyte(16Mx32-Bit), 100pin DIMM,
4Banks, 8K Ref., 3.3V
Part No. HSD16M32D4
GENERAL DESCRIPTION
The HSD16M32D4 is a 16M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists of
four CMOS 2M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 100-pin glass-epoxy substrate.
Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD16M32D4
is a DIMM( Dual in line Memory Module) and is intended for mounting into 100-pin edge connector sockets. Synchronous
design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range
of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high
performance memory system applications All module components may be powered from a single 3.3V DC power supply
and all inputs and outputs are LVTTL-compatible.
FEATURES
• Part Identification
HSD16M32D4-10 : 100MHz (CL=2)
HSD16M32D4-10L : 100MHz (CL=3)
HSD16M32D4-12 : 125MHz (CL=3)
HSD16M32D4-13 : 133MHz (CL=3)
• Burst mode operation
• Auto & self refresh capability (8192 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 4M x 16bit x 4Banks SDRAM
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