HDD16M64B8 Datasheet, PDF (1/11 Pages) Hanbit Electronics Co.,Ltd – DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref. SO-DIMM

HANBit
HDD16M64B8
DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks,
4K Ref. SO-DIMM
Part No. HDD16M64B8
GENERAL DESCRIPTION
The HDD16M64B8 is a 16M x 64 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module.
The module consists of eight CMOS 16M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages and 2K
EEPROM in 8-pin TSSOP package on a 200-pin glass-epoxy. Four 0.1uF decoupling capacitors are mounted on the printed
circuit board in parallel for each DDR SDRAM. The HDD16M64B8 is a SO-DIMM(Small Outline Dual in line Memory
Module) .Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allows the same device
to be useful for a variety of high bandwidth, high performance memory system applications. All module components may be
powered from a single 2.5V DC power supply and all inputs and outputs are SSTL_2 compatible.
FEATURES
• Part Identification
HDD16M64B8 – 10A : 100MHz (CL=2)
HDD16M64B8 – 13A : 133MHz (CL=2)
HDD16M64B8 – 13B : 133MHz (CL=2.5)
• 128MB(16Mx64) Unbuffered DDR SO-DIMM based on 16Mx8 DDR SDRSM
• 2.5V ± 0.2V VDD and VDDQ power supply
• Auto & self refresh capability (4096 Cycles/64ms)
• All input and output are compatible with SSTL_2 interface
• Data(DQ), Data strobes and write masks latched on the rising and falling edges of the clock
• All Addresses and control inputs except Data(DQ), Data strobes and Data masks latched on the rising edges of the clock
• MRS cycle with address key programs
- Latency (Access from column address) : 2, 2.5
- Burst length : 2, 4, 8
- Data scramble : Sequential & Interleave
• Data(DQ), Data strobes and write masks latched on the rising and falling edges of the clock
• All Addresses and control inputs except Data(DQ), Data strobes and Data masks latched on the rising edges of the clock
• The used device is 4M x 8bit x 4Banks DDR SDRAM
URL : www.hbe.co.kr
REV 1.0 (August. 2002)
1
HANBit Electronics Co.,Ltd.