HCD7NE70S Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 700V N-Channel Super Junction MOSFET

HCD7NE70S
700V N-Channel Super Junction MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 9 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower R_DS(ON) : 0.95 ȍ7\S#9_GS=10V
‰ 100% Avalanche Tested
Dec 2013
BV_DSS = 700 V
R_{DS(on) typ} = 0.95 ȍ
I_D = 6.0 A
D-PAK
2
1
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Gate-Source Voltage
Static
AC (f>1 Hz)
700
6.0
3.8
15.6
ρ20
ρ30
E_AS
Single Pulsed Avalanche Energy
(Note 2)
40
I_AR
Avalanche Current
(Note 1)
1.2
E_AR
Repetitive Avalanche Energy
(Note 1)
0.1
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
50
P_D
T_J, T_STG
T_L
Power Dissipation (T_A = 25୅)*
Power Dissipation (T_C = 25୅)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.1
28
-55 to +150
300
Thermal Resistance Characteristics
Units
V
A
A
A
V
V
mJ
A
mJ
V/ns
W
W
୅
୅
Symbol
Parameter
R_șJC
Junction-to-Case
R_șJA
Junction-to-Ambient*
Soldering temperature, wave soldering
T_sold
only allowed at leads
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
4.4
60.5
260
Units
୅/W
୅
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