S11510_15 Datasheet, PDF (6/7 Pages) Hamamatsu Corporation – IR-enhanced CCD image sensors

CCD image sensors
S11510 series
Dimensional outline (unit: mm)
A
24
13
3.3 ± 0.35
1
Index mark
Index mark
12
27.94 ± 0.3
38.10 ± 0.4
Photosensitive surface
0.46 ± 0.05
1.27 ± 0.2
2.54 ± 0.13
Type no.
Photosensitive area
A
B
S11510-1006 14.336 (H) 0.896 (V)
S11510-1106 28.672 (H) 0.896 (V)
KMPDA0265EA
Pin connections
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Symbol
OS
OD
OG
SG
SS
RD
P4H
P3H
P2H
P1H
IG2H
IG1H
OFG
OFD
ISH
ISV
SS
RD
IG2V
IG1V
P2V
P1V
TG
RG
Function
Output transistor source
Output transistor drain
Output gate
Summing gate
Substrate
Reset drain
CCD horizontal register clock-4
CCD horizontal register clock-3
CCD horizontal register clock-2
CCD horizontal register clock-1
Test point (horizontal input gate-2)
Test point (horizontal input gate-1)
Over flow gate
Over flow drain
Test point (horizontal input source)
Test point (vertical input source)
Substrate
Reset drain
Test point (vertical input gate-2)
Test point (vertical input gate-1)
CCD vertical register clock-2
CCD vertical register clock-1
Transfer gate
Reset gate
Remark (standard operation)
RL=100 kΩ
+24 V
+5 V
Same pulse as P4H
GND
+12 V
-8 V
-8 V
+12 V
+12 V
Connect to RD
Connect to RD
GND
+12 V
-8 V
-8 V
Same pulse as P2V
6