S9227 Datasheet, PDF (4/4 Pages) Hamamatsu Corporation – CMOS linear image sensor High-speed readout, simultaneous integration

s Pin connections
GND 1
NC 2
NC 3
Vdd 4
8 CLK
7 ST
6 EOS
5 Video
KMPDC0264EA
s Dimensional outline (unit: mm)
ACTIVE AREA
1 ch
6.4 × 0.25
8
5
CMOS linear image sensor S9227
Pin No.
1
2
3
4
5
6
7
8
Symbol
GND
NC
NC
Vdd
Video
EOS
ST
CLK
Name of pin
Ground
Supply voltage
Video output
End of scan
Start pulse
Clock pulse
I/O
I
Open
Open
I
O
O
I
I
1
4
12.0 ± 0.3
PIN No. 1
CHIP
0.5
2.54
7.62
0.25
7.62
KMPDA0173EA
s Precautions during use
(1) Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with
electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static dis-
charges. Also protect this device from surge voltages which might be caused by peripheral equipment.
(2) Incident window
If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing
the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a
cotton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window
surface so that no spot or stain remains.
(3) Soldering
To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times.
Soldering should be performed within 5 seconds at a soldering temperature below 260 °C.
(4) Operating and storage environments
Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively
high temperature and humidity may cause variations in performance characteristics and must be avoided.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]
Cat. No. KMPD1074E04
Feb. 2007 DN
4