S9066-211SB_15 Datasheet, PDF (4/9 Pages) Hamamatsu Corporation – Photo IC diodes

Photo IC diodes
S9066-211SB, S9067-201CT
Operating circuit example
Photodiode
for signal offset
Cathode
The drawing surrounded
by the dotted line shows
a schematic diagram of
the photo IC.
Current amp
(Approx. 30000 times)
Photodiode
for signal detection
Internal protection
resistance
(Approx. 150 Ω)
Reverse bias
power supply
The photo IC diode must be reverse-biased
so that a positive potential is applied to the
cathode.
To eliminate high-frequency components, we
recommend placing a load capacitance CL in
parallel with load resistance RL as a low-pass
fi lter.
Cutoff
frequency
(fc)
≈
1
2πCLRL
Anode
Vout
CL
RL
KPICC0091EC
Dimensional outlines (unit: mm)
5.2 ± 0.3
(Includig burr)
5.0
2.5 ± 0.2
S9066-211SB
Center of photosensitive area
Photosensitive area 0.46 × 0.32
2.0
1.0
(2 ×) ϕ1.0
(Depth 0.15)
(4 ×) 0.55
(4 ×) 0.45
ϕ2.0 (Depth 0.15)
1.27 1.27 1.27
(Specified at lead root)
Photosensitive
surface
10°
10°
5°
5°
0.25
+0.15
-0.1
Anode
(Anode)
NC
Cathode
Tolerance unless otherwise
noted: ±0.1, ±2°
Shaded area indicates burr.
Values in parentheses indicate
reference value.
KPICA0050EE
4