S1227_15 Datasheet, PDF (4/5 Pages) Hamamatsu Corporation – Si photodiodes

Si photodiodes
S1227-66BQ
10.1 ± 0.1
Photosensitive
area
5.8 × 5.8
Photosensitive
surface
Quartz window
0.5
Lead
Anode
terminal mark
9.2 ± 0.3
7.4 ± 0.2
S1227-1010BQ
Photosensitive 16.5 ± 0.2
area
10 × 10
Photosensitive
surface
Quartz window
0.5
Lead
Anode
terminal mark
15.1 ± 0.3
12.5 ± 0.2
S1227 series
S1227-66BR
Photosensitive ^{10.1 ± 0.1}
area
5.8 × 5.8
Photosensitive
surface
Resin
0.5
Lead
Anode
terminal mark
9.2 ± 0.3
7.4 ± 0.2
KSPDA0098EB
The resin potting may extend a
maximum of 0.1 mm above the
upper surface of the package.
KSPDA0099EB
S1227-1010BR
Photosensitive
area
10 × 10
16.5 ± 0.2
Photosensitive
surface
Resin
0.5
Lead
Anode
terminal mark
15.1 ± 0.3
12.5 ± 0.2
KSPDA0100EB
The resin potting may extend a
maximum of 0.1 mm above the
upper surface of the package.
KSPDA0101EB
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