G12181_15 Datasheet, PDF (4/6 Pages) Hamamatsu Corporation – InGaAs PIN photodiodes

InGaAs PIN photodiodes
G12181 series
Terminal capacitance vs. reverse voltage
10 nF
(Typ. Ta=25 °C, f=1 MHz)
G12181-030K/-130K/-230K
1 nF
100 pF
G12181-020K/-120K/-220K
G12181-010K/-110K/-210K
10 pF
1 pF
0.001
G12181-005K/-105K/-205K
G12181-003K/-103K/-203K
0.01
0.1
1
10
Reverse voltage (V)
KIRDB0485EB
Shunt resistance vs. element temperature
10 GΩ
1 GΩ
(Typ. VR=10 mV)
G12181-003K/-103K/-203K
G12181-005K/-105K/-205K
100 MΩ
G12181-010K/-110K/-210K
10 MΩ
1 MΩ
100 kΩ _{G12181-020K/-120K/-220K}
10 kΩ
G12181-030K/-130K/-230K
1 kΩ
-40 -20 0 20 40 60 80 100
Element temperature (°C)
KIRDB0486EB
The operating temperature for one-stage and
two-stage TE-cooled types is up to 70 °C.
Thermistor temperature characteristics
10⁶
(Typ.)
10⁵
10⁴
10³
-40 -30 -20 -10 0 10 20 30
Element temperature (°C)
KIRDB0116EA
Cooling characteristics of TE-cooler
(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)
40
20
One-stage
TE-cooled type
0
-20
Two-stage
-40
TE-cooled type
-60
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Current (A)
KIRDB0231EA
4