G12180_15 Datasheet, PDF (4/8 Pages) Hamamatsu Corporation – InGaAs PIN photodiodes

InGaAs PIN photodiodes
G12180 series
Terminal capacitance vs. reverse voltage
10 nF
(Typ. Ta=25 °C, f=1 MHz)
G12180-050A/-150A/-250A
G12180-030A/
-130A/-230A
1 nF
G12180-020A/
-120A/-220A
100 pF
G12180-010A/
-110A/-210A
G12180-005A
10 pF
1 pF
0.01
G12180-003A
0.1
1
10
Reverse voltage (V)
100
KIRDB0543EB
Thermistor temperature characteristics
10⁶
(Typ.)
10⁵
10⁴
10³
-40
-20
0
20
Element temperature (°C)
KIRDB0116EA
Shunt resistance vs. element temperature
1 TΩ
100 GΩ
10 GΩ
1 GΩ
(Typ. VR=10 mV)
G12180-003A
G12180-005A
G12180-010A/
-110A/-210A
100 MΩ
10 MΩ
1 MΩ
100 kΩ
10 kΩ
1 kΩ
-40
G12180-020A/
-120A/-220A
G12180-030A/
-130A/-230A
G12180-050A/-150A/-250A
-20 0 20 40 60
80 100
Element temperature (°C)
KIRDB0544EB
Cooling characteristics of TE-cooler
40 ^{(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)}
20
One-stage
TE-cooled type
0
-20
Two-stage
-40
TE-cooled type
-60
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Current (A)
KIRDB0231EA
4