S9703-10_15 Datasheet, PDF (3/4 Pages) Hamamatsu Corporation – Photo IC for laser beam synchronous detection

Photo IC for laser beam synchronous detection
S9703-10/-11
Function
The S9703-10/-11 photo IC integrates a photodiode chip and an IC chip into the same package. The photodiode chip is internally
connected to the IC chip as shown in the block diagram. The S9703-10/-11 should be used with terminal Ro connected to an external gain
resistance Ro.
A photocurrent is generated when a laser beam enters the photodiode. This photocurrent is fed to the input terminal of the IC and,
after being amplified by the current amplifier, flows to the external gain resistance. At this time, voltages VRO at terminal Ro is given by
the following expression.
VRO=A × S × PI × Ro [V] ∙∙∙∙∙∙∙∙ (1)
A: Current amplifier gain (S9703-10: 20 times, S9703-11: 6 times)
S: Photodiode sensitivity [A/W] (approx. 0.44 A/W at 780 nm)
PI: Input power [W]
Ro: External gain resistance [Ω]; usable range 2 kΩ to 10 kΩ
VRO is input to the internal comparator and compared with the internal reference voltage Vref (approx. 1 V) so the output Vo is “High”
when VRO < Vref or “Low” when VRO > Vref.
In equation (1), set the Ro value so that VRO will be 2 to 3 V.
Dimensional outline (unit: mm)
Center of
Photosensitive area
3.2 ± 0.2
(Including burr)
0.66 ± 0.2
0.5
Photosensitive
surface
1.0 ± 0.4
3.0*
1.0 ± 0.4
0.45 ± 0.3
5.0 ± 0.3
3.0*
2.8
2.4
Mirror area
range
0.45 ± 0.3
Photosensitive
surface
2.9
3.0*
0.05
0.35
0.75
1.3
Tolerance unless otherwise noted: ±0.1, ±2°
Shaded area indicates burr.
Chip position accuracy with respect to the
package dimensions marked *
X, Y≤±0.2, θ≤±2°
Vcc
NC
OUT
GND
Ro
GND
GND
GND
GND
GND
KPICA0071EA
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